Home > Prof. P. Murugapandiyan

 

Designation                Assistant Professor
Education ME (VLSI Design)
Area of Interest VLSI Design, Electron Devices, Digital Electronics and Digital Signal Processing

Experience    

Teaching Experience

Industry Experience

 

7.8 years

Email id pmu@aitdgoa.edu.in

Publications:

INTERNATIONAL JOURNAL:

  • Murugapandiyan, S.Ravimaran, J.William, J.Ajayan and D.Nirmal “DC and Microwave Characteristics of 20 nm T-Gate InAlN/GaN High Electron Mobility Transistor for High Power RF Applications”, superlattices and Microstructure (Elsevier), May 2017. http://dx.doi.org/10.1016/j.spmi.2017.05.060. (Scopus, SCI indexed, IF: 2.11)

 

  • Murugapandiyan, S. Ravimaran, J. William, K. Meenakshi Sundaram, “Design and Analysis of 30 nm T-Gate InAlN/GaN HEMT with AlGaN back-barrier for High power Microwave Applications”, Superlattices and Microstructure (Elsevier), August 2017. http://dx.doi.org/10.1016/j.spmi.2017.08.002. (Scopus, SCI indexed, IF: 2.11)

 

  • Murugapandiyan, S. Ravimaran, J. William, “30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications”, Vol. 38, No. 8 Journal of Semiconductors, August 2017. (Scopus indexed, IF: 0.4). https://10.1088/1674-4926/38/8/084001.

 

  • Murugapandiyan, S. Ravimaran, J. William, “DC and microwave characteristics of AlN spacer based Al0.37Ga0.63N/GaN HEMT on SiC substrates for high power RF applications”, Int. J. Nanoelectronics and Materials, 10 (2017) 17-28. (Scopus indexed, IF: 0.37)

 

  • Murugapandiyan, S. Ravimaran, J. William, “Static and Dynamic Characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimetre wave applications”, Journal of Science: Advanced Materials and Devices (Elsevier), August 2017. https://dx.doi.org/10.1016/j.jsamd.2017.08.004.  (Indexing in ESCI - Web of Science).

 

  • Murugapandiyan, S. Ravimaran, J. William, and Laxmikant D Bordekar “DC and Microwave Characteristics of Lg 20 nm T-Gate Enhancement Mode Al0.5Ga0.5N/AlN/GaN/Al0.08Ga0.92N High Electron Mobility Transistor for Next Generation High Power Millimeter Wave Applications” Journal of Nanoelectronics and Optoelectronics. August 2017. (Accepted for Publication). (Indexing in Scopus, SCI. IF: 0.467)

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