Home > Prof. P. Murugapandiyan

 

Designation                Assistant Professor
Education ME (VLSI Design)
Area of Interest VLSI Design, Electron Devices, Digital Electronics and Digital Signal Processing
Experience    

Teaching Experience

Industry Experience

 

7.8 years

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Email id pmu@aitdgoa.edu.in
Publications:

INTERNATIONAL JOURNAL:

  • Murugapandiyan, S.Ravimaran, J.William, J.Ajayan and D.Nirmal “DC and Microwave Characteristics of 20 nm T-Gate InAlN/GaN High Electron Mobility Transistor for High Power RF Applications”, superlattices and Microstructure (Elsevier), May 2017. http://dx.doi.org/10.1016/j.spmi.2017.05.060. (Scopus, SCI indexed, IF: 2.11)

 

  • Murugapandiyan, S. Ravimaran, J. William, K. Meenakshi Sundaram, “Design and Analysis of 30 nm T-Gate InAlN/GaN HEMT with AlGaN back-barrier for High power Microwave Applications”, Superlattices and Microstructure (Elsevier), August 2017. http://dx.doi.org/10.1016/j.spmi.2017.08.002. (Scopus, SCI indexed, IF: 2.11)

 

  • Murugapandiyan, S. Ravimaran, J. William, “30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications”, Vol. 38, No. 8 Journal of Semiconductors, August 2017. (Scopus indexed, IF: 0.4). https://10.1088/1674-4926/38/8/084001.

 

  • Murugapandiyan, S. Ravimaran, J. William, “DC and microwave characteristics of AlN spacer based Al0.37Ga0.63N/GaN HEMT on SiC substrates for high power RF applications”, Int. J. Nanoelectronics and Materials, 10 (2017) 17-28. (Scopus indexed, IF: 0.37)

 

  • Murugapandiyan, S. Ravimaran, J. William, “Static and Dynamic Characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimetre wave applications”, Journal of Science: Advanced Materials and Devices (Elsevier), August 2017. https://dx.doi.org/10.1016/j.jsamd.2017.08.004.  (Indexing in ESCI - Web of Science).

 

  • Murugapandiyan, S. Ravimaran, J. William, and Laxmikant D Bordekar “DC and Microwave Characteristics of Lg 20 nm T-Gate Enhancement Mode Al0.5Ga0.5N/AlN/GaN/Al0.08Ga0.92N High Electron Mobility Transistor for Next Generation High Power Millimeter Wave Applications” Journal of Nanoelectronics and Optoelectronics. August 2017. (Accepted for Publication). (Indexing in Scopus, SCI. IF: 0.467)

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